VS-ETF150Y65U

Vishay Semiconductor - Diodes Division VS-ETF150Y65U

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  • VS-ETF150Y65U
  • Vishay Semiconductor - Diodes Division
  • IGBT MOD 650V 142A EMIPAK-2B
  • Transistors - IGBTs - Modules
  • VS-ETF150Y65U 數據表
  • EMIPAK-2B
  • Tray
  • 無鉛/符合RoHS無鉛/符合RoHS
  • 26753
  • 現貨庫存/特許經銷商/工廠剩餘庫存
  • 1年品質保障 》
  • 點擊獲取費率
Part Number
VS-ETF150Y65U
Category
Transistors - IGBTs - Modules
Manufacturer
Vishay Semiconductor - Diodes Division
Description
IGBT MOD 650V 142A EMIPAK-2B
Package
Tray
Series
-
Operating Temperature
175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
EMIPAK-2B
Supplier Device Package
EMIPAK-2B
Power - Max
417 W
Configuration
Three Level Inverter
Current - Collector (Ic) (Max)
142 A
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector Cutoff (Max)
100 µA
IGBT Type
Trench
Vce(on) (Max) @ Vge, Ic
2.06V @ 15V, 100A
Input Capacitance (Cies) @ Vce
6.6 nF @ 30 V
Input
Standard
NTC Thermistor
No
Package_case
EMIPAK-2B

VS-ETF150Y65U 保障

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Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division
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