VS-ENQ030L120S

Vishay Semiconductor - Diodes Division VS-ENQ030L120S

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  • VS-ENQ030L120S
  • Vishay Semiconductor - Diodes Division
  • IGBT MOD 1200V 61A EMIPAK-1B
  • Transistors - IGBTs - Modules
  • VS-ENQ030L120S 數據表
  • EMIPAK-1B
  • Bulk
  • 無鉛/符合RoHS無鉛/符合RoHS
  • 2144
  • 現貨庫存/特許經銷商/工廠剩餘庫存
  • 1年品質保障 》
  • 點擊獲取費率
Part Number
VS-ENQ030L120S
Category
Transistors - IGBTs - Modules
Manufacturer
Vishay Semiconductor - Diodes Division
Description
IGBT MOD 1200V 61A EMIPAK-1B
Package
Bulk
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
EMIPAK-1B
Supplier Device Package
EMIPAK-1B
Power - Max
216 W
Configuration
Three Level Inverter
Current - Collector (Ic) (Max)
61 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
230 µA
IGBT Type
Trench
Vce(on) (Max) @ Vge, Ic
2.52V @ 15V, 30A
Input Capacitance (Cies) @ Vce
3.34 nF @ 30 V
Input
Standard
NTC Thermistor
Yes
Package_case
EMIPAK-1B

VS-ENQ030L120S 保障

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Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division
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