Toshiba Semiconductor and Storage TK31N60X,S1F
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- TK31N60X,S1F
- Toshiba Semiconductor and Storage
- MOSFET N-CH 600V 30.8A TO247
- Transistors - FETs, MOSFETs - Single
- TK31N60X,S1F 數據表
- TO-247-3
- Tube
-
無鉛/符合RoHS - 1643
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number TK31N60X,S1F |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 600V 30.8A TO247 |
| Package Tube |
| Series DTMOSIV-H |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 230W (Tc) |
| FET Type N-Channel |
| FET Feature Super Junction |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 30.8A (Ta) |
| Rds On (Max) @ Id, Vgs 88mOhm @ 9.4A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
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