Toshiba Semiconductor and Storage TJ8S06M3L(T6L1,NQ)
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- TJ8S06M3L(T6L1,NQ)
- Toshiba Semiconductor and Storage
- MOSFET P-CH 60V 8A DPAK
- Transistors - FETs, MOSFETs - Single
- TJ8S06M3L(T6L1,NQ) 數據表
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Bulk
-
無鉛/符合RoHS - 4200
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number TJ8S06M3L(T6L1,NQ) |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET P-CH 60V 8A DPAK |
| Package Bulk |
| Series U-MOSVI |
| Operating Temperature 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package DPAK+ |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 27W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 8A (Ta) |
| Rds On (Max) @ Id, Vgs 104mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 10 V |
| Vgs (Max) +10V, -20V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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