Toshiba Semiconductor and Storage SSM6J511NU,LF
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- SSM6J511NU,LF
- Toshiba Semiconductor and Storage
- MOSFET P-CH 12V 14A 6UDFNB
- Transistors - FETs, MOSFETs - Single
- SSM6J511NU,LF 數據表
- 6-WDFN Exposed Pad
- Cut Tape (CT)
-
無鉛/符合RoHS - 4440
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number SSM6J511NU,LF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET P-CH 12V 14A 6UDFNB |
| Package Cut Tape (CT) |
| Series U-MOSVII |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 6-WDFN Exposed Pad |
| Supplier Device Package 6-UDFNB (2x2) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) - |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 12 V |
| Current - Continuous Drain (Id) @ 25°C 14A (Ta) |
| Rds On (Max) @ Id, Vgs 9.1mOhm @ 4A, 8V |
| Vgs(th) (Max) @ Id 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 47 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 3350 pF @ 6 V |
| Vgs (Max) - |
| Drive Voltage (Max Rds On, Min Rds On) - |
| Package_case 6-WDFN Exposed Pad |
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