Vishay Siliconix SIHH100N60E-T1-GE3
- SIHH100N60E-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 600V 28A PPAK 8 X 8
- Transistors - FETs, MOSFETs - Single
- SIHH100N60E-T1-GE3 數據表
- 8-PowerTDFN
- Tube
-
無鉛/符合RoHS
- 2971
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number SIHH100N60E-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 600V 28A PPAK 8 X 8 |
Package Tube |
Series E |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package PowerPAK® 8 x 8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 174W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 28A (Tc) |
Rds On (Max) @ Id, Vgs 100mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 100 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case 8-PowerTDFN |
SIHH100N60E-T1-GE3 保障
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