Vishay Siliconix SIHG33N60E-GE3
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- SIHG33N60E-GE3
- Vishay Siliconix
- MOSFET N-CH 600V 33A TO247AC
- Transistors - FETs, MOSFETs - Single
- SIHG33N60E-GE3 數據表
- TO-247-3
- Tube
-
無鉛/符合RoHS - 1467
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
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| Part Number SIHG33N60E-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 600V 33A TO247AC |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247AC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 278W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 33A (Tc) |
| Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 3508 pF @ 100 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
SIHG33N60E-GE3 保障
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