Vishay Siliconix SI3459BDV-T1-E3
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- SI3459BDV-T1-E3
- Vishay Siliconix
- MOSFET P-CH 60V 2.9A 6TSOP
- Transistors - FETs, MOSFETs - Single
- SI3459BDV-T1-E3 數據表
- SOT-23-6 Thin, TSOT-23-6
- Cut Tape (CT)
-
無鉛/符合RoHS - 26661
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number SI3459BDV-T1-E3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET P-CH 60V 2.9A 6TSOP |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package 6-TSOP |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.3W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 2.9A (Tc) |
| Rds On (Max) @ Id, Vgs 216mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case SOT-23-6 Thin, TSOT-23-6 |
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