STMicroelectronics SCT50N120
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- SCT50N120
- STMicroelectronics
- SICFET N-CH 1200V 65A HIP247
- Transistors - FETs, MOSFETs - Single
- SCT50N120 數據表
- TO-247-3
- Cut Tape (CT)
-
無鉛/符合RoHS - 4259
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number SCT50N120 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer STMicroelectronics |
| Description SICFET N-CH 1200V 65A HIP247 |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 200°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package HiP247™ |
| Technology SiCFET (Silicon Carbide) |
| Power Dissipation (Max) 318W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1200 V |
| Current - Continuous Drain (Id) @ 25°C 65A (Tc) |
| Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V |
| Vgs (Max) +25V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) 20V |
| Package_case TO-247-3 |
SCT50N120 保障
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