IXYS IXFT50N50P3
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- IXFT50N50P3
- IXYS
- MOSFET N-CH 500V 50A TO268
- Transistors - FETs, MOSFETs - Single
- IXFT50N50P3 數據表
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Tube
-
無鉛/符合RoHS - 13352
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number IXFT50N50P3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 500V 50A TO268 |
| Package Tube |
| Series HiPerFET™, Polar3™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package TO-268AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 960W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 500 V |
| Current - Continuous Drain (Id) @ 25°C 50A (Tc) |
| Rds On (Max) @ Id, Vgs 120mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs 85 nC @ 0 V |
| Input Capacitance (Ciss) (Max) @ Vds 4335 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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