IGN1011L70

Integra Technologies Inc. IGN1011L70

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  • IGN1011L70
  • Integra Technologies Inc.
  • GAN, RF POWER TRANSISTOR, L-BAND
  • Transistors - FETs, MOSFETs - RF
  • IGN1011L70 數據表
  • PL32A2
  • Bulk
  • 無鉛/符合RoHS無鉛/符合RoHS
  • 1872
  • 現貨庫存/特許經銷商/工廠剩餘庫存
  • 1年品質保障 》
  • 點擊獲取費率
Part Number
IGN1011L70
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Integra Technologies Inc.
Description
GAN, RF POWER TRANSISTOR, L-BAND
Package
Bulk
Series
-
Package / Case
PL32A2
Supplier Device Package
PL32A2
Frequency
1.03GHz ~ 1.09GHz
Gain
22dB
Noise Figure
-
Power - Output
80W
Transistor Type
GaN HEMT
Voltage - Test
50 V
Current - Test
22 mA
Voltage - Rated
120 V
Current Rating (Amps)
-
Package_case
PL32A2

IGN1011L70 保障

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• 響應及時

• 質量保證

• 全球通行

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