Toshiba Semiconductor and Storage GT30J121(Q)
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- GT30J121(Q)
- Toshiba Semiconductor and Storage
- IGBT 600V 30A 170W TO3PN
- Transistors - IGBTs - Single
- GT30J121(Q) 數據表
- TO-3P-3, SC-65-3
- Tube
-
無鉛/符合RoHS - 3209
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
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| Part Number GT30J121(Q) |
| Category Transistors - IGBTs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description IGBT 600V 30A 170W TO3PN |
| Package Tube |
| Series - |
| Operating Temperature - |
| Mounting Type Through Hole |
| Package / Case TO-3P-3, SC-65-3 |
| Supplier Device Package TO-3P(N) |
| Power - Max 170 W |
| Input Type Standard |
| Reverse Recovery Time (trr) - |
| Current - Collector (Ic) (Max) 30 A |
| Voltage - Collector Emitter Breakdown (Max) 600 V |
| IGBT Type - |
| Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A |
| Gate Charge - |
| Td (on/off) @ 25°C 90ns/300ns |
| Test Condition 300V, 30A, 24Ohm, 15V |
| Current - Collector Pulsed (Icm) 60 A |
| Switching Energy 1mJ (on), 800µJ (off) |
| Package_case TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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