Nexperia USA Inc. GAN063-650WSAQ
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- GAN063-650WSAQ
- Nexperia USA Inc.
- GANFET N-CH 650V 34.5A TO247-3
- Transistors - FETs, MOSFETs - Single
- GAN063-650WSAQ 數據表
- TO-247-3
- Tube
-
無鉛/符合RoHS - 1298
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
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| Part Number GAN063-650WSAQ |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Nexperia USA Inc. |
| Description GANFET N-CH 650V 34.5A TO247-3 |
| Package Tube |
| Series Automotive, AEC-Q101 |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247-3 |
| Technology GaNFET (Cascode Gallium Nitride FET) |
| Power Dissipation (Max) 143W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 34.5A (Ta) |
| Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 400 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
GAN063-650WSAQ 保障
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