Fairchild Semiconductor FQP19N20C
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- FQP19N20C
- Fairchild Semiconductor
- POWER FIELD-EFFECT TRANSISTOR, 1
- Transistors - FETs, MOSFETs - Single
- FQP19N20C 數據表
- TO-220-3
- Bulk
-
無鉛/符合RoHS - 25932
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number FQP19N20C |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Fairchild Semiconductor |
| Description POWER FIELD-EFFECT TRANSISTOR, 1 |
| Package Bulk |
| Series QFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 139W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 19A (Tc) |
| Rds On (Max) @ Id, Vgs 170mOhm @ 9.5A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1.08 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
FQP19N20C 保障
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FQP19N20C 相關商品
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Fairchild Semiconductor
Fairchild is now part of ON Semiconductor
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