Fairchild Semiconductor FQB19N20LTM
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- FQB19N20LTM
- Fairchild Semiconductor
- POWER FIELD-EFFECT TRANSISTOR, 2
- Transistors - FETs, MOSFETs - Single
- FQB19N20LTM 數據表
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
-
無鉛/符合RoHS - 3543
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number FQB19N20LTM |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Fairchild Semiconductor |
| Description POWER FIELD-EFFECT TRANSISTOR, 2 |
| Package Bulk |
| Series QFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package D²PAK (TO-263) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.13W (Ta), 140W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 21A (Tc) |
| Rds On (Max) @ Id, Vgs 140mOhm @ 10.5A, 10V |
| Vgs(th) (Max) @ Id 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds 2.2 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 5V, 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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FQB19N20LTM 相關商品
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