IXYS FII30-12E
- FII30-12E
- IXYS
- IGBT H BRIDGE 1200V 33A I4PAK5
- Transistors - IGBTs - Arrays
- FII30-12E 數據表
- i4-Pac™-5
- Tube
- 無鉛/符合RoHS
- 2645
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number FII30-12E |
Category Transistors - IGBTs - Arrays |
Manufacturer IXYS |
Description IGBT H BRIDGE 1200V 33A I4PAK5 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case i4-Pac™-5 |
Supplier Device Package ISOPLUS i4-PAC™ |
Power - Max 150 W |
Configuration Half Bridge |
Current - Collector (Ic) (Max) 33 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 200 µA |
IGBT Type NPT |
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 20A |
Input Capacitance (Cies) @ Vce 1.2 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case i4-Pac™-5 |
FII30-12E 保障
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IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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