ON Semiconductor FDP39N20
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- FDP39N20
- ON Semiconductor
- MOSFET N-CH 200V 39A TO220-3
- Transistors - FETs, MOSFETs - Single
- FDP39N20 數據表
- TO-220-3
- Cut Tape (CT)
-
無鉛/符合RoHS - 24665
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number FDP39N20 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 200V 39A TO220-3 |
| Package Cut Tape (CT) |
| Series UniFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 251W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 39A (Tc) |
| Rds On (Max) @ Id, Vgs 66mOhm @ 19.5A, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
FDP39N20 保障
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