Vishay Semiconductor - Diodes Division FB180SA10
- FB180SA10
- Vishay Semiconductor - Diodes Division
- MOSFET N-CH 100V 180A SOT-227
- Transistors - FETs, MOSFETs - Single
- FB180SA10 數據表
- SOT-227-4, miniBLOC
- Tube
- 無鉛/符合RoHS
- 2268
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number FB180SA10 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Semiconductor - Diodes Division |
Description MOSFET N-CH 100V 180A SOT-227 |
Package Tube |
Series HEXFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case SOT-227-4, miniBLOC |
Supplier Device Package SOT-227 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 480W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 180A (Tc) |
Rds On (Max) @ Id, Vgs 6.5mOhm @ 108A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 10700 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case SOT-227-4, miniBLOC |
FB180SA10 保障
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Vishay Semiconductor - Diodes Division
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