Sanyo 2SC3332S-AA-SA
- 2SC3332S-AA-SA
- Sanyo
- NPN EPITAXIAL PLANAR SILICON
- Transistors - Bipolar (BJT) - Single
- 2SC3332S-AA-SA 數據表
- TO-226-3, TO-92-3 (TO-226AA)
- Bulk
- 無鉛/符合RoHS
- 4977
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number 2SC3332S-AA-SA |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer Sanyo |
Description NPN EPITAXIAL PLANAR SILICON |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package 3-NP |
Power - Max 700 mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 700 mA |
Voltage - Collector Emitter Breakdown (Max) 160 V |
Vce Saturation (Max) @ Ib, Ic 400mV @ 25mA, 250mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V |
Frequency - Transition 120MHz |
Package_case TO-226-3, TO-92-3 (TO-226AA) |
2SC3332S-AA-SA 保障
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