2SB1136R

Sanyo 2SB1136R

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  • 2SB1136R
  • Sanyo
  • PNP EPITAXIAL PLANAR SILICON
  • Transistors - Bipolar (BJT) - Single
  • 2SB1136R 數據表
  • TO-220-3 Full Pack
  • Bulk
  • 無鉛/符合RoHS無鉛/符合RoHS
  • 4286
  • 現貨庫存/特許經銷商/工廠剩餘庫存
  • 1年品質保障 》
  • 點擊獲取費率
Part Number
2SB1136R
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Sanyo
Description
PNP EPITAXIAL PLANAR SILICON
Package
Bulk
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220ML
Power - Max
2 W
Transistor Type
PNP
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 600mA, 6A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 2V
Frequency - Transition
10MHz
Package_case
TO-220-3 Full Pack

2SB1136R 保障

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